Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 63, Issue 12, Pages 4981-4985Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2614432
Keywords
Compact modeling; ferroelectric; negative capacitance; negative capacitance FET (NCFET)
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We present an accurate and computationally efficient physics-based compact model to quantitatively analyze negative capacitance FET (NCFET) for real circuit design applications. Our model is based on the Landau-Khalatnikov equation coupled to the standard BSIM6 MOSFET model and implemented in Verilog-A. It includes transient and temperature effects, and accurately captures different aspects of NCFET. A comprehensive quasi-static analysis of NCFET in its different regions of operation is also performed using a simpler loadline approach. We also analyze the impact of ferroelectric and gate oxide thicknesses on the performance gain of NCFET over MOSFET.
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