Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 63, Issue 3, Pages 1078-1084Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2518703
Keywords
Doping effects; indium oxide; solution process; stability; thin-film transistors (TFTs)
Funding
- Ministry of Trade, Industry and Energy/Knowledge Exchange and Impact Team within the Industrial Strategic Technology Development Program [10045269]
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Research on a replacement of amorphous silicon for a thin-film transistor (TFT) and large area electronics has been driven by costly vacuum processed indium-gallium-zinc oxide (IGZO). Even though widely studied, the performances still require improvement, and a wide number of other materials have been tested. While indium-zinc oxide, IGZO, indium-zinc-tin oxide (ZTO), and ZTO have been widely investigated, gallium-doped indium oxide (IGO) has not been under highlight. Here, we report the use of simple and cost effective spin-coated IGO TFT using spin-coated AlOx gate dielectric. We achieved high mobility over 50 cm(2)/Vs and high stability. The thin films are studied by transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectra, atomic force microscopy, and field-effect measurements. Analyses reveal the strong dependence between crystallinity, mobility, and stability. All TFTs show excellent operation, with champion characteristics for the 10% Ga-doped InOx, revealing a mobility of 52.6 cm(2)/Vs, ON/OFF ratios of 10(8), and V-TH variation of <0.1 V during 1 h of stress measurement.
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