Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 63, Issue 9, Pages 3501-3507Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2588439
Keywords
Charge-trapping phenomena; data retention; endurance; ferroelectric memories; ferroelectric transistor; HfO2-based FeFET
Funding
- European Regional Development Fund of the European Commission within the Scope of Technology Development
- Free State of Saxony
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Ferroelectric field effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO2) thin films show high potential for future embedded nonvolatile memory applications. However, HfO2 films besides their recently discovered ferroelectric behavior are also prone to undesired charge trapping effects. Therefore, the scope of this paper is to verify the possibility of the charge trapping during standard operation of the HfO2-based FeFET memories. The kinetics of the charge trapping and its interplay with the ferroelectric polarization switching are analyzed in detail using the single-pulse I-D-V-G technique. Furthermore, the impact of the charge trapping on the important memory characteristics such as retention and endurance is investigated.
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