Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 63, Issue 1, Pages 16-25Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2015.2446204
Keywords
CMOS photodiode; crosstalk; lateral current; modeling; simulation
Funding
- Spanish Ministerio de Ciencia e Innovacion [TEC2009-12686, TEC2012-38921-C02-02]
- Agrupacion Estratexica Centro de Investigacion en Tecnologias de la Informacion [CN2012/151]
- Xunta de Galicia [EM2013/038]
- European Regional Development Fund/Fonds Europeen de Developpement Economique et Regional [GPC2013/040]
- Consejeria Economia, Innovacion, Ciencia y Empleo, Junta de Andalucia [FQM.1861]
Ask authors/readers for more resources
The CMOS photodiode is the primary photosensing device used in solid-state image sensors. A review of significant CMOS photodiode models that can be found in the literature in recent years is presented here. We have focused on photocurrent models in one, two, and three dimensions, paying special attention to lateral current components. Lateral collection, particularly for small devices fabricated in deep submicrometer technologies, has been shown to be of utmost importance. Finally, several models to account for crosstalk effects are also described.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available