Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures

An electroluminescence (EL) phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures-without any p-type contacts-was investigated from 4.2 K to 300 K. In the range of 200-300 K, the extracted peak photon energies agree with the Monemar formula. In the range of 30 to 200 K, the photon energies are consistent with A-exciton emission. At 4.2 K, the exciton type likely transforms into B-exciton. These studies confirm that the EL emission comes from a cross-bandgap (or band-to-band) electron-hole radiative recombination and is excitonic. The excitons are formed by the holes generated through interband tunneling and the electrons injected into the GaN emitter region of the GaN/AlN heterostructure devices.

Automated summary

The study investigates the electroluminescence phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures without p-type contacts, showing changes in photon energy characteristics at different temperature ranges and confirming the emission source as excitonic radiative recombination.