Journal
ENERGIES
Volume 14, Issue 19, Pages -Publisher
MDPI
DOI: 10.3390/en14196098
Keywords
HEMT; normally-OFF; P-GaN; CBE
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Funding
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- PROMPT-FRQNT (Fonds Quebecois de la recherche sur la nature et les technologies)
- GaNSystems: project RDC-Quartz
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This paper presents a Normally-OFF GaN HEMT device with a p-doped GaN barrier layer regrown by CBE, achieving a V-th of 1.5 V with 4E17 cm(-3) p doping. The impact of p doping on device performance was investigated using a TCAD simulator. The breakdown of the fabricated device was examined, and the cause of device failure was identified.
In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm(-3) p doping, a V-th of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.
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