Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 63, Issue 1, Pages 353-359Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2015.2503987
Keywords
Frequency conversion; microwave circuits; mixers; sensor systems and applications detectors semiconductor detectors
Funding
- Direccion General de Investigacion Cientifica y Tecnica within Ministerio de Economia y Competitividad [TEC2013-41640-R]
- Consejeria de Educacion de la Junta de Castilla y Leon [SA052U13]
- RF/MEMS
- ROOTHz European Project
- [243845]
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An experimental demonstration of GaN-based asymmetric nanodiodes as direct and heterodyne detectors up to 0.69 THz has been performed at room temperature. Responsivities of 2 and 0.3 V/W in a free-space configuration were obtained at 0.30 and 0.69 THz, respectively. An intermediate frequency (IF) signal has been measured up to 40 and 13 GHz in the same frequency ranges. The characterization of the nanodiodes as mixers did not show any deviation from linearity between the RF input power and the IF output. Monte Carlo simulations, used to estimate nanodevice intrinsic conversion losses of 27 dB at 0.69 THz, have confirmed these results.
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