Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 63, Issue 11, Pages 4309-4314Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2608970
Keywords
InGaZnO; nitrogen incorporation; reliability; TFTs
Funding
- 863 Program [2014AA033002]
- 985 Project [30000-31101200]
- Guangdong Provincial Department of Science and Technology [2015B090924001]
- Guangdong Natural Science Funds for Distinguished Young Scholars [2016A030306046]
- National Natural Science Foundation of China [61504173]
- Shunde Government, Guangdong Province [20140401]
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Instability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) remains an obstacle for commercialization. Here, we systematically discuss the effect of nitrogen incorporation on a-IGZO TFT stability and developed Ar/O-2/N-2 atmosphere to improve the stability under stressing in different conditions. Based on X-ray photoelectron spectrometer results, it is revealed that the positive gate bias stress (PGBS) stability is significantly improved due to microscopically passivated metal-oxygen bonds. Yet, the negative gate bias and light stress (NBLS) stability is seriously deteriorated with heavily nitrogen incorporation probably due to the bandgap narrowing effect. By optimizing a mixed O-2/N-2 atmosphere, the subgap states are finely tuned to afford optimal performance and stability. The developed IGZO TFTs exhibit mobility (12.67 cm(2)/Vs), small shift of threshold voltage under PGBS (reduced by 64% as compared with the pristine a-IGZO TFTs), and good negative gate bias stability and with NBLS stability as well.
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