Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 63, Issue 8, Pages 3278-3283Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2580180
Keywords
Fowler-Nordheim (FNORD); SOI; tunnel-FET; tunneling; vacuum transistor
Funding
- [POSDRU/89/1.5/S/62557]
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This paper presents new work regimes accompanied by specific conduction models of an SOI nanotransistor with a vacuum cavity. The tunneling mechanisms are separately explored to find out the dominant mechanism. Afterward, the simulations show for the first time two firms on and off states under the gate command. Strong and weak tunneling regimes are emphasized. For the first time, a quasi-saturation region of the I-D-V-DS curves is obtained for V-DS > 6 V. Different device structures are compared. The best configuration has the swing of 290 mV/decade, threshold voltage of -0.5 V and maximum I-ON/I-OFF ratio of 10(10), which is a real gain among the vacuum transistors. Some applications as vacuum diode, switch under the gate command or action as parasitic device are emphasized.
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