Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 63, Issue 3, Pages 1020-1026Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2518206
Keywords
III-V; contact resistivity; film resistivity; MOSFETs; nanocontacts; self-aligned; tight pitch
Funding
- National Science Foundation through the NCN-NEEDS Program [1227020-EEC]
- Defense Threat Reduction Agency [HDTRA1-14-1-0057]
- Northrop Grumman Corporation
- Donner Chair at the Massachusetts Institute of Technology
- SMART/LEES Program
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We demonstrate InGaAs quantum-well (QW) MOSFET arrays with Mo contact lengths between 40 and 800 nm fabricated by a self-aligned process. A gate pitch of 150 nm is realized, which is the smallest at present for any type of InGaAs FET structure. Fabricated gated MOSFET arrays and gate-less arrays are used to study the properties of nanoscale ohmic contacts in InGaAs MOSFETs with different contact lengths. A three-layer resistive-network model is developed to analyze the contact electrical characteristics. From this paper, we extract a contact resistivity from Mo to n(+) InGaAs of 8 x 10(-9) Omega . cm(2), and from n+ InGaAs to the QW channel of 2 x 10(-8) Omega. cm(2). When benchmarked with other ohmic contact technologies for n-type InGaAs MOSFETs, our refractory metal contact approach represents the lowest film resistivity and is among the lowest contact resistivity that has been demonstrated. The contact model developed here infers a contact resistance from the Mo contact to the channel of 260 Omega . mu m for a contact length of L-c = 10 nm. This suggests that further research on low-resistance ohmic contacts is required before InGaAs MOSFETs can deliver the required performance.
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