☆
4.6
Article
Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Rate this paper
The primary rating indicates the level of overall quality for the paper. Secondary ratings independently reflect strengths or weaknesses of the paper.
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreDiscover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversation