Journal
DYES AND PIGMENTS
Volume 194, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.dyepig.2021.109576
Keywords
D-pi-A systems; Physical property; Electronic memristor
Funding
- National Natural Science Foundation of China [21672051, 22008164]
- Natural Science Foundation of Hebei Province for Distinguished Young Scholar [B2017201072]
- Natural Science Foundation of Hebei Province [B2020201044, BK20190939]
- Key Research Projects of Science and Technology in Universities of Hebei Province [ZD2020128]
- talent training project of Hebei Province [A201902006]
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China [19KJB150018]
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By synthesizing and fully characterizing two novel small donor-pi-acceptor derivatives, it was found that the device based on 5 exhibited wider memory windows, higher ON/OFF ratio, and excellent bipolar resistive switching behavior compared to the device based on 3.
Two novel small donor-pi-acceptor derivatives (D-pi-A, 3 and 5) containing aromatic amine as a donor and naphthalimide as an acceptor have been synthesized and fully characterized. The derivatives were selected as active layers in the fabrication of solution-processable electronic resistive memory devices. The experimental results indicated that the 5-based device exhibited wider memory windows, higher ON/OFF ratio and excellent bipolar resistive switching behavior compared with the 3-based device. In addition, detailed analyses of electrical properties, intramolecular charge transfer in molecules 3 and 5, and surface morphology of the as-prepared devices were carried out to realize the boosting resistive switching response.
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