4.7 Article

Bright Yb3+ complexes for efficient pure near-infrared OLEDs

Journal

DYES AND PIGMENTS
Volume 195, Issue -, Pages -

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.dyepig.2021.109701

Keywords

Ytterbium; 1,3-Diketones; Complexes; NIR OLED; Luminescence

Funding

  1. Russian Science Foundation [19-13-00272]
  2. Council on grants of the President of the Russian Federation [MK-1301.2021.1.3]
  3. Ministry of Science and Higher Education of the Russian Federation
  4. Russian Science Foundation [19-13-00272] Funding Source: Russian Science Foundation

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A series of new Yb3+ and Gd3+ complexes were synthesized and characterized for their potential use as emitters in multilayer OLEDs, with [Yb(2-Naph)(3)(phen)] showing unusually high electroluminescence quantum efficiency. Detailed information about the energy transfer process in this system was revealed through TD-DFT calculations and experimental results.
A series of neutral Yb3+ and Gd3+ complexes with isomeric 4,4,4-trifluoro-1-(naphthalenyl)butane-1,3-diones and 1,10-phenanthroline as an ancillary ligand were synthesized and characterized by a full range of analytical methods, including elemental analysis, FTIR and NMR spectroscopy, single crystal X-ray analysis, cyclic voltammetry (CVA) and thermal analysis (TG/DTA). Moreover, the unexpected formation of a mixed diketonatecarboxylate Yb3+ complex [Yb(2-Naph)(2)(CF3COO)(phen)(H2O)] from [Yb(2-Naph)(3)(phen)] in solution was observed. The photoluminescence quantum yield (PLQY) for complex [Yb(2-Naph)3(phen)] in the near infra-red region (one band with a peak at 980 nm) was about 3,2%. This value is close to the highest one reported for 1,3-diketonate complexes of Yb3+ ion to date. The energy transfer process is discussed in details, based on the results of TD-DFT calculations and experimental photophysical measurements. These complexes were successfully used as emitters in multilayer OLEDs. The electroluminescence quantum efficiency corresponding to the sole band at 980 nm reached 0.042% with a maximum irradiance of 11 mu W/cm(2) at 8.5 V for [Yb(2-Naph)(3)(phen)] based device, which is unusually high for such type of emitters.

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