Journal
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume 16, Issue 2, Pages 208-212Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2016.2557585
Keywords
Current-voltage characteristics; ion radiation effects; modeling; power semiconductor devices; Schottky diodes; silicon carbide (SiC)
Funding
- Walter Ahlstrom Foundation through Tutkijat Maailmalle program
- European Space Research and Technology Centre, European Space Agency [4000111630/14/NL/PA]
- Academy of Finland through Finnish Centre of Excellence Programme [2513553]
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Under heavy-ionexposure at sufficiently high reversebias voltages, silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed.
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