Simultaneously higher thermal stability and lower resistance drifting for Sb/In48.9Sb15.5Te35.6 nanocomposite multilayer films

In this study, In48.9Sb15.5Te35.6 (IST) was introduced as a stable interlayer to improve the weak amorphous thermal stability and large resistance drift of Sb films. The results showed that Sb atoms tend to bond with In atoms to form In-Sb bonds at the multilayer interfaces, thus improving the thermal stability of multilayer films. Compared with Sb films, Sb/IST had a higher phase transition temperature (similar to 196 degrees C) and crystallization activation energy (similar to 2.23 eV). The surface scratch test revealed that the adhesion of the Sb/IST multilayer film to the substrate was stronger. The separation of the interfaces reduced the phase transition range and made the density change smaller before and after crystallization (similar to 3.1%). Grain refinement resulted in a decrease in resistance drift and electrostatic potential on the film surface for the Sb/IST film. A phase change memory device based on the Sb/IST multilayer film successfully realized the reversible operation of SET and RESET. The feasibility of the Sb/IST multilayer films as a kind of phase change material with high stability and low resistance drift was verified.

Automated summary

In this study, In48.9Sb15.5Te35.6 (IST) was used as a stable interlayer to improve the thermal stability and resistance drift of Sb films. The introduction of In-Sb bonds at the multilayer interfaces enhanced the thermal stability of the films. The Sb/IST multilayer film exhibited higher phase transition temperature, crystallization activation energy, and better adhesion to the substrate compared to Sb films.