4.7 Article

Nonclassical Crystallization of an Al2O3 Film by Positively Charged Secondary Nanoparticles during Aerosol Deposition

Journal

CRYSTAL GROWTH & DESIGN
Volume 21, Issue 12, Pages 7240-7246

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.1c01092

Keywords

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Funding

  1. Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning (MSIT) [NRF-2013M3A6B1078874]
  2. National Research Foundation of Korea (NRF) - Korean Government (MSIT) [2020R1A5A6017701]
  3. Samsung Electronics Co., Ltd.

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The study investigated the role of charged secondary nanoparticles in the aerosol deposition process, revealing that the positive charge enhanced plastic deformation for the evolution of dense films. This was supported by capturing and observing the secondary nanoparticles with transmission electron microscopy, showing their influence on the film formation during aerosol deposition.
Thin film growth through nonclassical crystallization with charged nanoparticles as building blocks has been studied in chemical vapor deposition and physical vapor deposition. A similar mechanism might be applied to aerosol deposition (AD), with which the mechanism for the evolution of dense ceramic films at room temperature has not been clearly understood. Aerosol particles fracture into fragments of secondary nanoparticles during AD. In this work, secondary particles passing between the two parallel biased and grounded electrodes were captured by the transmission electron microscopy (TEM) grid membrane on each electrode, and it was revealed that they were mainly positively charged. Neutral secondary nanoparticles, not deflected by the electric field, produced a porous film on the silicon substrate, whereas charged secondary nanoparticles produced a dense film. The positive charge of the secondary nanoparticles appeared to enhance the plastic deformation required for the evolution of dense films during AD, which was supported by ab initio calculations.

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