Low-Temperature Physical Vapor Deposition and Electrical Characterization of Single-Crystalline Zn Nanowires

Single-crystalline Zn nanowires were synthesized by physical vapor deposition at a low growth temperature of 100 degrees C. The morphology changes from wool-like to unidirectional nanowires with decreasing Zn concentration in the carrier gas. A growth model is proposed to explain the unidirectional growth of the nanowires along the [11 (2) over bar0] direction. The electrical transport properties of Zn nanowires were investigated by measurements of the resistivity and breakdown current density of individual nanowires. The nanowires have a low resistivity of (11.9 +/- 3.4) mu Omega.cm and can withstand a remarkably high current density of (2.3 +/- 0.6) x 10(7) A.cm(-2).

Automated summary

In this study, single-crystalline Zn nanowires were successfully synthesized via physical vapor deposition at a low growth temperature of 100 degrees C. It was found that the morphological transition from wool-like to unidirectional nanowires occurred with decreasing Zn concentration in the carrier gas. Additionally, the Zn nanowires exhibited low resistivity and high current density, making them a promising candidate for various applications.