Journal
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
Volume 35, Issue 1, Pages 1-22Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCAD.2015.2481793
Keywords
Boolean logic; magnetic tunnel junction (MTJ); neuromorphic computing; non-Boolean logic; nonvolatile memory; post-CMOS; spin-transfer torque (STT); spintronics
Categories
Funding
- C-SPIN, one of the six centers of STARnet, a Semiconductor Research Corporation program - Microelectronics Advanced Research Corporation
- Defense Advanced Research Projects Agency
- National Science Foundation
- National Security Science and Engineering Faculty Fellowship Program
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As CMOS technology begins to face significant scaling challenges, considerable research efforts are being directed to investigate alternative device technologies that can serve as a replacement for CMOS. Spintronic devices, which utilize the spin of electrons as the state variable for computation, have recently emerged as one of the leading candidates for post-CMOS technology. Recent experiments have shown that a nano-magnet can be switched by a spin-polarized current and this has led to a number of novel device proposals over the past few years. In this paper, we provide a review of different mechanisms that manipulate the state of a nano-magnet using current-induced spin-transfer torque and demonstrate how such mechanisms have been engineered to develop device structures for energy-efficient on-chip memory and logic.
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