Journal
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
Volume 63, Issue 9, Pages 1370-1380Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSI.2016.2576643
Keywords
Bulk-driven; low line sensitivity; low power; low voltage; sub-threshold; voltage reference
Categories
Funding
- National Natural Science Foundation of China [61322405, 61234002, 61306044, 61376033]
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An ultra-low voltage, low power, low line sensitivity MOSFET-only sub-threshold voltage reference with no amplifiers is presented. The low sensitivity is realized by the difference between two complementary currents and second-order compensation improves the temperature stability. The bulk-driven technique is used and most of the transistors work in the sub-threshold region, which allow a remarkable reduction in the minimum supply voltage and power consumption. Moreover, a trimming circuit is adopted to compensate the process-related reference voltage variation while the line sensitivity is not affected. The proposed voltage reference has been fabricated in the 0.18 mu m 1.8 V CMOS process. The measurement results show that the reference could operate on a 0.45 V supply voltage. For supply voltages ranging from 0.45 to 1.8 V the power consumption is 15.6 nW, and the average temperature coefficient is 59.4 ppm/degrees C across a temperature range of -40 to 85 degrees C and a mean line sensitivity of 0.033%. The power supply rejection ratio measured at 100 Hz is -50.3 dB. In addition, the chip area is 0.013 mm(2).
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