Journal
COMPUTATIONAL MATERIALS SCIENCE
Volume 201, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.commatsci.2021.110861
Keywords
Growth kinetics; Solid; liquid interface; Crystal growth; Molecular dynamics simulations; Metals
Categories
Funding
- National Natural Science Foundation of China [52071204, 51620105012]
- China Scholarship Council (CSC) [201706230106]
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The study established a strong correlation between the density of defected atom pairs at the crystal-liquid interface and the activation energy for crystal growth, revealing that the orientations of interstitial pairs at the interface play a significant role in determining the local structure, energy, and crystal growth kinetics.
In this work, a strong correlation between the density of defected atom pairs at the crystal-liquid interface and the activation energy for crystal growth from deeply undercooled melts is established. Using molecular dynamics simulations we study the intermediate interstitial pairs at the crystal-melt interfaces of both BCC and FCC pure metals. It is found that the pairs have preferred orientations, and two important types of interstitial pairs at the interfaces are identified according to their orientations. We demonstrate that the relative amount of these two kinds of interstitial pairs varies greatly for different systems and dominates the activation energy for crystal growth. The dependence of local structure and energy on the orientation of the interfacial interstitial pairs are revealed and the connections of these features with crystal growth kinetics are disclosed.
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