4.5 Article

High power semiconductor laser array with single-mode emission

Journal

CHINESE PHYSICS B
Volume 31, Issue 5, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/1674-1056/ac373d

Keywords

semiconductor laser arrays; single-mode; high power; high beam quality

Funding

  1. National Science and Technology Major Project of China [2018YFB0504600, 2017YFB0405102]
  2. Frontier Science Key Program of the President of the Chinese Academy of Sciences [QYZDY-SSW-JSC006]
  3. Pilot Project of the Chinese Academy of Sciences [XDB43030302]
  4. National Natural Science Foundation of China [62090051, 62090052, 62090054, 11874353, 61935009, 61934003, 61904179, 61727822, 61805236, 62004194, 61991433]
  5. Science and Technology Development Project of Jilin Province, China [20200401062GX, 202001069GX, 20200501006GX, 20200501007GX, 20200501008GX, 20190302042GX]
  6. Key Research and Development Project of Guangdong Province, China [2020B090922003]
  7. Equipment Pre-research, China [2006ZYGG0304]
  8. Special Scientific Research Project of the Academician Innovation Platform in Hainan Province, China [YSPTZX202034]
  9. Dawn Talent Training Program of CIOMP, China

Ask authors/readers for more resources

This paper presents a semiconductor laser array with single-mode emission. The lateral mode is selected by fabricating 6 μm-wide ridge waveguides, which enables the fundamental mode of the laser array. The maximum output power of single-mode emission reaches 36 W at an injection current of 43 A, followed by a kink. The slow axis far-field divergence angle of the unit is 13.65 degrees. The beam quality factor M (2) of the units, determined by the second-order moment method, is 1.2. This single-mode emission laser array can be used for laser processing.
The semiconductor laser array with single-mode emission is presented in this paper. The 6-mu m-wide ridge waveguides (RWGs) are fabricated to select the lateral mode. Thus the fundamental mode of laser array can be obtained by the RWGs. And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A, after that, a kink will appear. The slow axis (SA) far-field divergence angle of the unit is 13.65 degrees. The beam quality factor M (2) of the units determined by the second-order moment (SOM) method, is 1.2. This single-mode emission laser array can be used for laser processing.

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