4.5 Article

Anisotropic superconducting properties of FeSe0.5Te0.5 single crystals

Journal

CHINESE PHYSICS B
Volume 31, Issue 9, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/1674-1056/ac5610

Keywords

FeSe1-x Te x single crystal; anisotropy; resistivity; magnetization

Funding

  1. National Key Research and Development Program of China [2016YFA0300401]
  2. Strategic Priority Research Program of Chinese Academy of Sciences [XDB25000000]

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In this study, we investigated the anisotropic electrical transport and magnetic properties of FeSe0.5Te0.5 single crystals grown by the self-flux method. The in-plane resistivity exhibited a metallic-like temperature dependence, while the out-of-plane resistivity showed a broad hump at around 64 K. The magnetization loops for H//c-axis and H//ab-plane were also different, with a typical second peak observed for H//c-axis. The in-plane critical current density was higher than the out-of-plane critical current density. The coherence length and penetration depth were estimated using the Ginzburg-Landau theory. The anisotropic parameter gamma depended on the applied magnetic field and temperature. The coupling of superconducting FeSe(Te) layers and the flux pinning mechanism relevant to anisotropy were also discussed.
We investigated the anisotropic electrical transport and magnetic properties of FeSe0.5Te0.5 single crystals grown by the self-flux method. The in-plane resistivity shows a metallic-like temperature dependence, while the out-of-plane resistivity shows a broad hump with a maximum at around 64 K. The magnetization loops for H//c-axis and H//ab-plane are also different, for example, there is a typical second peak for H//c-axis. The in-plane critical current density is larger than the out-of-plane one. The coherence length and penetration depth were estimated by the Ginzburg-Landau theory. The anisotropic parameter gamma depends on the applied magnetic field and the temperature. The coupling of superconducting FeSe(Te) layers and the flux pinning mechanism relevant to anisotropy are also discussed.

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