Journal
CHINESE OPTICS LETTERS
Volume 20, Issue 2, Pages -Publisher
OSA-OPTICAL SOC
DOI: 10.3788/COL202220.022501
Keywords
interband cascade lasers; quantum well; mid-infrared; semiconductor lasers
Categories
Funding
- National Key Research and Development Project [2018YFB2200500]
- National Natural Science Foundation of China [61790583, 61774150]
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We demonstrate GaSb-based interband cascade lasers with high output power and good reliability.
We demonstrate GaSb-based interband cascade lasers (ICLs) emitting around 3.65 mu m, which exhibit a room-temperature continuous-wave (CW) output power above 100 mW. Cavity-length analysis showed that the laser structure has a low internal loss of 3 cm(-1) while maintaining a total internal quantum efficiency greater than one. After 6400 h CW operation at 25 degrees C, the threshold current of the laser increased by 3%, and the output power decreased by 7%, indicating good reliability of the device.
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