High-Pressure Synthesis of Polar and Antiferromagnetic Mn2MnMoO6

Polar and magnetic Mn2MnMoO6 with a Ni3TeO6-type structure (R3) was synthesized at 1673 K under 8 GPa. Mn2MnMoO6 shows a large spontaneous polarization of 65.76 mu C.cm(-2), two magnetic transitions at 19 and 47 K, and a strong magnetic frustration factor (f) of 18.4. The polarization reversal barrier is estimated to be 232 meV. X-ray absorption spectroscopy established Mn22+Mn2+Mo6+O6 formal oxidation states. Theoretical calculations indicate an antiferromagnetic ground state of up-down-up-down-up-down spin alignment for Mn ions and a semiconductor characteristic with a band gap around 1.06 eV. Magnetism-dependent dielectric responses show no magnetodielectric and electric coupling, which is attributed to the high polarization reversal barrier and grain boundary effects.

Automated summary

Polar and magnetic Mn2MnMoO6 material with Ni3TeO6-type structure was synthesized under high pressure and temperature, and its physical properties were investigated. The material exhibits a large spontaneous polarization, multiple magnetic transition points, and strong magnetic frustration factor. The independence of magnetism and dielectric responses is attributed to the high polarization reversal barrier and grain boundary effects.