Journal
CHEMICAL ENGINEERING JOURNAL
Volume 425, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2021.131444
Keywords
Chemical bath deposition; Interface passivation; Large area; Variance; Mercaptosuccinic acid
Categories
Funding
- National Key Research and Development Plan [2017YFE0131900, 2019YFE0107200]
- National Natural Science Foundation of China [52072284, 21875178, 91963209]
- Fundamental Research Funds for the Central Universities [WUT: 202443004]
- Technological Innovation Key Project of Hubei Province [2018AAA048]
- Chutian Scholar Program of Hubei Province, China
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A modified double chemical bath deposition (DC) process was used to fabricate large-area tin oxide films for perovskite solar cells, leading to homogenized performance and improved efficiency, stability, and homogeneity of the devices. Introduction of mercaptosuccinic acid at the SnO2/perovskite interface further enhanced the power conversion efficiency, resulting in high efficiency perovskite devices. These findings suggest great potential for large-area and high efficiency perovskite module preparation using this modified CBD route.
Chemical bath deposited tin oxide film (CBD SnO2) has been demonstrated as an amazing electron transporting layer for high photoconversion efficiency (PCE) hybrid perovskite solar cells (PSCs) over 25 %. The current CBD process is normally studied for small area devices. A rapid batch production of large-area CBD SnO2 film with high and uniform performance is essential for potential upscaling of perovskite solar module. Herein, we carried out a modified batch CBD process, a double chemical bath deposition (DC), for batch fabrication of large-area (400 cm(2)) SnO2 films and realized a homogenized PCE with a variance (V-a) of 0.127, comparing to that of control sample of V-a at 2.833. We further introduced mercaptosuccinic acid (MSA) at the interface of SnO2/perovskite for convenient energy band alignment and defects passivation, which significantly improved the PCE, stability and homogeneity of the devices. As a result, the mix-cation planar PSCs reaches 21.24% with further reduced V-a of 0.073. A high efficiency of 22.54% was obtained for the narrow band gap FA-based perovskite device. These results suggest high potential of this modified CBD route for large area and high efficiency perovskite module preparation.
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