Journal
CERAMICS INTERNATIONAL
Volume 48, Issue 9, Pages 12112-12117Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2022.01.071
Keywords
Ga- 2 O- 3 nanorod; Photodetector; PMMA; Hydrothermal method
Categories
Funding
- National Natural Science Foundation of China [11874143, 51972101]
- Natural ScienceFoundation of Hubei Province [2019CFB508]
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This paper reports dual strategies to reduce the dark current of hydrothermally fabricated Ga2O3 nanorod PDs. Through annealing treatment and coating, the dark current of the PDs is significantly reduced, resulting in improved on/off ratio and overall performance of the devices.
Gallium oxide (Ga2O3) is a promising candidate for next-generation solar-blind photodetectors (PDs) because of its large bandgap of 4.9 eV. Its single-crystal nanorod structure improves its photoelectric performance, which promotes carrier transformation and separation. However, Ga2O3 nanorods fabricated by the hydrothermal method have many oxygen vacancies, which largely enhance the dark current and reduce the on/off ratio of PDs, restricting application of such devices. Therefore, in this paper, dual strategies are applied to reduce the dark current of a metal-semiconductor-metal-structured Ga2O3 nanorod PD fabricated by the hydrothermal method. Through these dual strategies, which include annealing treatment and the application of a polymethyl methacrylate (PMMA) coating, the dark current of the PD is reduced from 1.34 x 10(-7) to 2.04 x 10(-9 )A at 1 V, resulting in the on/off ratio of the PD reaching as high as 3.24 x 10(4). Besides, the responsivity and detectivity of the device reach 1.73 A/W and 2.53 x 10(12) Jones respectively, which represents better performance than those of other reported Ga2O3 nanorod array PDs. Results have shown that the new strategy adopted can greatly improve the performance of Ga2O3-based ultraviolet photodetectors.
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