Journal
CERAMICS INTERNATIONAL
Volume 48, Issue 4, Pages 4693-4698Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2021.11.005
Keywords
Self-rectifying; Forming-free; Resistive switching; Lanthanum titanium oxide; Schottky barrier
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Funding
- National Key Research and Development Program of China [2019YFB2005801]
- National Natural Science Foundation of China [52061135205, 51731003, 51971024, 51971023, 51971027, 51927802]
- Beijing Natural Science Foundation Key Program [Z190007]
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In this work, the resistive switching behavior of an amorphous La2Ti2O7 film sandwiched between two Pt electrodes is reported. The resistive switching is forming-free and highly uniform. The mechanism of switching behavior is attributed to trapping/detrapping-mediated electronic bipolar resistance switching.
In this work, we report the resistive switching behavior of an amorphous La2Ti2O7 (LTO) film as sandwiched between two Pt electrodes. The resistive switching is forming-free and highly uniform. Furthermore, it exhibits self-rectifying resistive switching behaviors owing to the Schottky contact and quasi-ohmic contact formed at the top and bottom interfaces, respectively. The mechanism of switching behavior in the device is attributed to the trapping/detrapping-mediated electronic bipolar resistance switching. By fitting the current-voltage characteristics, it indicates the coexistent conduction mechanisms of Schottky emission and space-charge-limitedconduction (SCLC), while the Schottky barrier modified by electron trapping/detrapping plays a dominating role in the resistive switching process.
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