Journal
CERAMICS INTERNATIONAL
Volume 48, Issue 10, Pages 14349-14359Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2022.01.325
Keywords
Solution combustion synthesis; Silicon ions (Si4+) substitution; Calcium phosphates (CaPs); Density functional theory (DFT); Crystallization rate; Crystal growth
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Funding
- Ferdowsi University of Mashhad [1/53984]
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The influence of heat treatment on the properties of silicon-doped calcium phosphates was investigated using density functional theory (DFT) and experimental methods. The results showed that the crystallization rate was affected by the fuel type and the amount of Si4+ ions. Crystal growth and doping of Si4+ ions on the surface of CaPs were found to decrease the activation energy of the oxygen reduction reaction (ORR). The research suggests that the crystallized HAp structure has the potential to reduce oxidative stress in the human body.
The influence of heat-treatment temperatures (700 degrees C, 900 degrees C, 1200 degrees C) on the phase, physical properties, crystallization rate, and in vitro properties of the solution combustion synthesized silicon-doped calcium phosphates (CaPs) were investigated. The thermodynamic aspects (enthalpy, entropy, and free energy) of the synthesis process and the crystallographic properties of the final samples were first predicted and then confirmed using density functional theory (DFT). Results demonstrated that the crystallization rate was controlled by the fuel(s) type (glycine, citric acid, and urea) and the amounts of Si4+ ions (0, 0.1, 0.4 mol). The highest calculated crystallization rate values of the un-doped, 0.1, and 0.4 mol Si-doped samples were 64%, 22%, 38%, respectively. The obtained results from the DFT simulation revealed that crystal growth in the direction of c-axis of hydroxyapatite (HAp) structure could change the stability of (001) surface of (HAp). Also, the computational data confirmed the adsorption of Si-OH groups on the (001) surface of HAp during the SCS process with an adsorption energy of 1.53 eV. AFM results in line with DFT simulation showed that the observed change in the surface roughness of Si-doped CaPs from 2 to 8 nm could be related to the doping of Si4+ ions onto the surface of CaPs. Besides, the theoretical and experimental investigation showed that crystal growth and doping of Si4+ ions could decrease the activation energy of oxygen reduction reaction (ORR). Furthermore, the results showed that the crystallized HAp structure could have great potential to efficiently reduce oxidative stress in human body.
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