High energy storage and colossal permittivity CdCu3Ti4O12 oxide ceramics

How to simultaneously realize colossal permittivity and high energy storage density has always been an urgent problem to be solved for ACu(3)Ti(4)O(12)-family (ACTO) oxide materials. In this work, an effective strategy of enhancing breakdown field strength (E-b) was adopted to achieve high energy storage density (W) in CdCu3Ti4O12(CdCTO) ceramics via a semi-wet chemistry technique. Encouragingly, the E-b of CdCTO oxide materials was enhanced obviously upon SiO2 doping, resulting in high energy storage density (W), maintaining high permittivity. Remarkably, at a SiO2 doping level of 4.0 wt%, a CdCTO -4.0 wt% SiO2 ceramic exhibited an enhanced energy storage density (W) of -1.77 mJ/cm(3) accompanied with a high E-b of -2352 V/cm. Also, a good dielectric property with a high permittivity epsilon(r) of -5200 and a lowed loss tangent tan delta of -0.06 at 10 kHz was obtained in CdCTO -2.0 wt% SiO2 ceramic. The acceptable dielectric properties and energy storage performances were ascribed to the significantly enhanced grain boundary resistance (R-gb) due to the decreased grain size that formed upon SiO2 doping. Our findings in this work could provide useful insights as to how to simultaneously realize colossal permittivity and high energy storage density in CdCTO and other related dielectric ceramics.

Automated summary

In this study, an effective strategy was adopted to enhance the breakdown field strength (E-b) in CdCu3Ti4O12(CdCTO) ceramics using a semi-wet chemistry technique, resulting in a significant increase in energy storage density (W) while maintaining high permittivity. The decreased grain size formed upon SiO2 doping significantly enhanced grain boundary resistance (R-gb), leading to acceptable dielectric properties and energy storage performances.