Journal
IEEE SENSORS JOURNAL
Volume 16, Issue 16, Pages 6184-6191Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2016.2582840
Keywords
Silicon light emitting device; electro-optic modulation; semiconductor integrated optoelectronics
Funding
- Natural Science Foundation of China [61540013]
- Department of Science and Technology of Sichuan Province [2016JY0217]
- Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201508]
- Science and Technology on Analog Integrated Circuits Laboratory [9140C090112150C09042]
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This paper studies integrated silicon light emitter implemented in standard CMOS technologies. A new MOS-like structure utilizing deep p-well is presented, and compared with conventional planar p-n junction diode at visible wavelength and avalanching bias conditions. Prototype light emitter is fabricated in a 3-mu m standard CMOS technology, and its dc, phase shift, and direct modulation frequency response with nanowatt power level are characterized, with experimental results for a reverse-bias region showing light modulation with the simulated maximum modulation frequency around similar to 45 GHz being reported.
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