Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 28, Issue 10, Pages 1130-1133Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2016.2532338
Keywords
Light emitting diodes; high electron mobility transistors; monolithic integration
Funding
- Research Grants Council, Hong Kong [16204714, T23-612/12-R]
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We report lateral integration of an InGaN/GaN light-emitting diode (LED) and an AlGaN/GaN high electron mobility transistor (HEMT) via the epitaxial layers. Direct contact of the HEMT channel and the n-GaN electrode of the LED allows for conversion of a current-controlled LED to a voltage-controlled device by the gate and drain biases. The integrated HEMT-LED exhibited a light output power of 7 mW from the LED with a modulated injection current of 80 mA through the HEMT (V-DD = 8 V and VGS = 1 V). The off-state breakdown voltage for the integrated HEMT-LED was 530 and 270 V at forward and reverse bias condition, respectively. The superior characteristics are attributed to the common GaN/AlN buffer platform featured with high crystalline quality and large resistivity simultaneously.
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