Journal
APPLIED SURFACE SCIENCE
Volume 570, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2021.151132
Keywords
InGaN waveguide; Surface morphology; V-defects; Residual impurity; GaN lasers
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Funding
- National Key R&D Program of China [2016YFB0401801, 2018YFB0406903]
- National Natural Science Foundation of China [62034008, 62074142, 62074140, 61974162, 61904172, 61874175]
- Beijing Nova Program [202093]
- Youth Innovation Promotion Association of Chinese Academy of Sciences [2019115]
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The study found that surface roughness, V-defects, and residual impurities in the InGaN lower waveguide layer significantly impact the performance of GaN-based laser diodes. A smooth interface/surface is crucial for reducing threshold current and resistance of the laser, while reducing V-defects and impurities in the waveguide layer can improve current injection efficiency and decrease series resistance of the lasers.
We investigated the influence of surface morphology, V-defects and residual impurities of InGaN lower waveguide layer on the performance of GaN-based laser diodes. It is found that the surface roughness is one of key factors to affect the L-I and I-V characteristics of lasers. A smooth interface/surface is critical to reduce the threshold current and resistance of the laser. Reducing the V-defects and impurities in InGaN waveguide layer is also expected to raise current injection efficiency and reduce series resistance of lasers.
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