Journal
APPLIED SURFACE SCIENCE
Volume 562, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2021.150159
Keywords
Ho doped ZnO; Thin films; Photoluminescence
Categories
Funding
- [P_40_374]
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Poly crystalline Holmium-doped zinc oxide thin films were successfully prepared using sol-gel method. The films exhibited changes in particle size, morphology, and band gap with increasing Ho concentration, demonstrating a direct link between Ho emission and its incorporation in the ZnO matrix.
Polycrystalline Ho (1, 3, 5 at %) doped ZnO thin films were prepared by sol-gel method. The films show a pure wurtzite crystalline structure. The particle size decreases from 29 to 9 nm when the Ho concentration increases from 0 to 5 at %. They present a homogeneous morphology for the specimens containing 1 and 3 at % of Ho. At 5 at % Ho the morphology of the film changes and the particles agglomerate in larger clusters. The UV-Vis transmission was found higher than 70% and a decreasing of the band gap from 3.28 to 3.22 eV was observed with the increase of the Ho concentration. The F-5(5)-> I-5(8) Ho transition at similar to 662 nm can be easily identified in the photoluminescence (PL) spectra, using an UV excitation source. A combined analysis of the photoluminescence properties at the room temperature and of the morphological and structural characteristics of the films allows us to directly link the Ho emission to the Ho incorporation in ZnO matrix.
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