4.7 Article

Self-Powered Near-Infrared photodetector based on Graphyne/Hexagonal boron phosphide heterostructure with high responsivity and Robustness: A theoretical study

Journal

APPLIED SURFACE SCIENCE
Volume 569, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2021.151035

Keywords

Graphyne; hexagonalboron phosphide heterostructure; Electronic structure; Optical absorption; Photoresponsivity; Self-powered near-infrared photodetector; The first-principles calculations

Funding

  1. national natural science foundation of China [61306009]
  2. Science and Technology Star Project of Shaanxi Province [2013KJXX-24]
  3. Natural Science Foundation of Shaanxi Province [2018JM6046]
  4. Northwest University Doctorate Dissertation of Excellence Funds [YYB17021]
  5. International Science and technology cooperation program of Shaanxi Province [2021KW-03]
  6. Compute Canada
  7. Institute of Microelectronics Technology of Northwest University

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The self-powered near-infrared photodetector based on Gyne/BP heterostructure exhibits a wideband photoresponsivity from 750 nm to 1500 nm with a maximum of 120 mA/W. The type-II band alignment, large band offset, and built-in electric field contribute to the superior photoresponsivity. Additionally, the strained Gyne/BP photodetector outperforms the unstrained one in terms of photoresponsivity due to enhanced light absorption and smaller effective mass.
Two-dimensional van der Waals (vdW) heterostructures provide an ideal platform for various optoelectronic applications. However, a weak self-powered near-infrared photoresponsivity limits their applications. Here, a novel self-powered near-infrared photodetector with ultra-broadband, high responsivity, and high robustness based on graphyne/hexagonal boron phosphide (Gyne/BP) heterostructure is proposed by using the firstprinciples calculation and quantum transport simulations. The self-powered near-infrared Gyne/BP photodetector displays a wideband photoresponsivity from 750 nm to 1500 nm and the maximum photoresponsivity can reach up to 120 mA/W. Revealed by the interfacial properties of Gyne/BP heterostructure, the type-II band alignment, large CBO and VBO, and built-in electric field contribute to the superior photoresponsivity. Surprisingly, such broadband and high self-powered photoresponsivity are robust against external elastic strain by virtue of the robust type-II band alignment, large band offset, and intrinsic built-in electric field in strained Gyne/ BP heterostructure. Nonetheless, the compressive strained Gyne/BP photodetector generates superior photoresponsivity compared with unstrained one on account of the enhanced light absorption and smaller effective mass. Our study demonstrates that Gyne/BP vdW heterostructure is a promising candidate for self-powered nearinfrared photodetector, and the robustness of the photoelectric properties provides enormous convenience in experimental fabrication.

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