Related references
Note: Only part of the references are listed.Micro-Raman investigation of p-type B doped Si(100) revisited
S. Palleschi et al.
APPLIED SURFACE SCIENCE (2021)
Double-Gate TFET With Vertical Channel Sandwiched by Lightly Doped Si
Jang Hyun Kim et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Studying dopant diffusion from Poly-Si passivating contacts
Frank Feldmann et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2019)
Impact of the phosphorus emitter doping profile on metal contact recombination of silicon wafer solar cells
Vinodh Shanmugam et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2016)
Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications
L. Zhang et al.
MICROELECTRONICS RELIABILITY (2015)
Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels
T. Kunz et al.
JOURNAL OF APPLIED PHYSICS (2013)
Depth profile characterization of ultra shallow junction implants
Philipp Hoenicke et al.
ANALYTICAL AND BIOANALYTICAL CHEMISTRY (2010)
Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions
Fabrice Severac et al.
JOURNAL OF APPLIED PHYSICS (2010)
Stress and doping uniformity of laser crystallized amorphous silicon in thin film silicon solar cells
R. M. B. Agaiby et al.
JOURNAL OF APPLIED PHYSICS (2010)
Raman study of Fano interference in p-type doped silicon
Brian G. Burke et al.
JOURNAL OF RAMAN SPECTROSCOPY (2010)
Highly p-doped regions in silicon solar cells quantitatively analyzed by small angle beveling and micro-Raman spectroscopy
M. Becker et al.
JOURNAL OF APPLIED PHYSICS (2009)
Nanometer strain profiling through Si/SiGe quantum layers
R. M. B. Agaiby et al.
JOURNAL OF APPLIED PHYSICS (2008)
Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients
Martin A. Green
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2008)
Electrical characterization of semiconductor materials and devices - review
M. J. Deen et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2006)
Application of UV-Raman Spectroscopy for characterization of the physical crystal structure following flash anneal of an ultrashallow implanted layer
Masahiro Yoshimoto et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2006)
Characterization of Si nano-polycrystalline films at the nanometer level using resonant Raman scattering
M Yoshikawa et al.
JOURNAL OF APPLIED PHYSICS (2005)
Electrical activation of ultra-shallow B and BF2 implanted silicon by flash anneal
WS Yoo et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2005)
Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum
VA Volodin et al.
JETP LETTERS (2005)
Fano-type interference in the Raman spectrum of photoexcited Si
V Magidson et al.
PHYSICAL REVIEW B (2002)
Spreading resistance roadmap towards and beyond the 70 nm technology node
W Vandervorst et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2002)
Visible and ultraviolet Raman scattering studies of Si1-xGex alloys
M Holtz et al.
JOURNAL OF APPLIED PHYSICS (2000)