Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD

Recently, very thin AlAs capping layers (CLs) have been proposed as a useful tool to increase the performance of InAs/GaAs quantum dot (QDs) devices. However, the structure of QDs after AlAs deposition remains poorly understood and the mechanisms to explain it are often contradictory. In this work, the structural and compositional changes of InAs QDs using different AlAs CL thicknesses have been studied by state-of-the-art STEMrelated techniques. First, the heights and In contents of InAs QDs progressively increase with the CL thickness, demonstrating that the AlAs capping produces a strong shielding effect against the decomposition of QDs. However, QD populations for CL thicknesses above 5 ML split into a bimodal distribution in which smaller lenticular QDs cohabit with bigger truncated pyramids. Second, the actual Al contents around the QDs are well below the nominal design, but increasing for thicker CLs. Its distribution is initially non-uniform, tending to accumulate on the flanks of the QDs to the detriment of the apex. Only for thicknesses above 2 ML the Al contents around the QDs start to be similar to those in the regions between the QDs, behaving as a continuous film without irregularities from 5 ML onwards.

Automated summary

Recently, very thin AlAs capping layers have been proposed as a useful tool to enhance the performance of InAs/GaAs quantum dot devices. The height and In content of InAs QDs increase progressively with the AlAs capping layer thickness, showing a strong shielding effect against QD decomposition. For AlAs capping layers above 5 ML thickness, QD populations split into a bimodal distribution of smaller lenticular QDs and larger truncated pyramids.