Design of oxygen vacancy in BiFeO3-based films for higher photovoltaic performance

Photovoltaic technology has been a research hotspot in the field of renewable and clean solar energy. More recently, the fermelectric photovoltaic effect (FEPV) of BiFeO3 has attracted much attention, since it could obtain a giant open-circuit voltage (V-OC) far beyond its bandgap and possibly break through the energy conversion limit of traditional solar cells. However, there has been controversy about the origin and the mechanism of FEPV in BiFeO3. In this work, (Pr, Ni) co-doped BiFeO3 film photovoltaic devices were well constructed and the intrinsic mechanism of the photovoltaic effect was comprehensively investigated. The results and analysis suggested that oxygen vacancies play significant roles on the photovoltaic effect of BiFeO3. Oxygen vacancies not only introduce impurity band as an intermediate band among the band gap of fermelectric semiconductor to enhance the photocurrent, but also restructure the energy band of Schottky barrier at the interfaces through their electro-migration that acts as a driving force to achieve the switchable photovoltaic response.

Automated summary

Photovoltaic technology has been a research hotspot in the field of renewable energy, and the fermelectric photovoltaic effect in BiFeO3 has attracted attention for its potential to break through energy conversion limits. Oxygen vacancies play a significant role in enhancing the photovoltaic effect by introducing impurity bands and restructuring energy band structures.