Chemical synthesis of Cd1-x-yZnxCuySzSe1-z composite thin films for photoelectrochemical solar cell

The constraints over efficiency improvements in Cu2ZnSn(S, Se)(4) photovoltaic cells have prompted the search for alternative replacements. The simultaneous incorporation of (Cu, Zn, S) in the CdSe host lattice with different stoichiometry can be an attractive approach to circumventing the difficulties associated with CZTSSe. This paper reports the non-vacuum deposition technique of a new chalcogenide semiconductor material, Cd1-x-yZnxCuySzSe1-z (0 <= x + y <= z <= 0.15) sample-0 to 3), for photoelectrochemical (PEC) solar cell applications. Compositional studies detected Cd, Cu, Zn, Se, and S in the deposits, and chemical analysis identified Cd2+, Cu2+, Zn2+, S2- and Se2- in the deposits. Surface micrographs revealed a cauliflower-like morphology having a high surface area, which can provide additional reactive sites for the effective percolation of electrolyte ions. The AFM study showed uniformly distributed hillocks and valleys with the maximum surface to area ratio. The highest efficiency of 1.60 % was achieved for Cd1-x-yZnxCuySzSe1-z solar cells (sample-3). These results highlight this new material for further studies.

Automated summary

A new chalcogenide semiconductor material, Cd1-x-yZnxCuySzSe1-z, was prepared using a non-vacuum deposition technique for photoelectrochemical solar cell applications, showing a high surface area and additional reactive sites, with the highest efficiency achieved at 1.60%. The material is highlighted for further studies.