Journal
APPLIED SURFACE SCIENCE
Volume 569, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2021.151010
Keywords
Band alignment; Energy band offsets; Photodetector; CuGaO2; beta-Ga2O3
Categories
Funding
- National Science Foundation of China [11975257, 11675198, 11875097, 61574026, 61774072]
- Fundamental Research Funds for the Central Universities [DUT19LK45]
- Dalian Science and Technology Innovation Fund [2018J12GX060]
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In this study, single-oriented CuGaO2 films were successfully grown on beta-Ga2O3 substrate. Investigation of energy band offsets and alignment at CuGaO2/beta-Ga2O3 heterojunction revealed a type-II band alignment. The prepared CuGaO2/beta-Ga2O3 heterojunction-based ultraviolet photodetector exhibited a significant ultraviolet photoresponse at zero bias voltage, showing potential for future self-power deep UV optoelectronic devices facilitated by the combination of beta-Ga2O3 and wide bandgap delafossite oxide semiconductor.
Single-oriented CuGaO2 films have been successfully grown on beta-Ga2O3 (201) substrate by reactive deposition epitaxy. The energy band offsets and alignment at CuGaO2/beta-Ga2O3 heterojunction are investigated by x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). A type-II band alignment is identified at CuGaO2/beta-Ga2O3 heterojunction with valence band offset (VBO) of 1.63 eV and conduction band offset (CBO) of 0.45 eV. The CuGaO2/beta-Ga2O3 heterojunction based ultraviolet photodetector is prepared which exhibits an obvious ultraviolet (UV) photoresponse at zero bias voltage. The combination between beta-Ga2O3 and wide bandgap delafossite oxide semiconductor may open up possibilities for next generation self-power deep UV optoelectronic devices in future.
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