Journal
APPLIED RADIATION AND ISOTOPES
Volume 179, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.apradiso.2021.110030
Keywords
Semiconductors; Betavoltaic; Tritium; GaAs; Pulsed laser deposition; Monte-Carlo modeling
Categories
Funding
- Ministry of Science and Higher Education of the Russian Federation [075-00355-21-00, 075-03-2020-191/5]
- Russian Foundation for Basic Research [18-29-19137_mk]
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This study investigated GaAs semiconductor structures for betavoltaic power sources and found that deposition of a carbon layer can improve the performance of the Schottky structure.
The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon layer. The power characteristics were estimated by Monte-Carlo simulation and collected current calculation using parameters obtained from the electron beam induced current technique. It was shown that carbon deposition on the top of n-GaAs allows passivating the surface states and thus improving betavoltaic performance.
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