High-performance near-infrared photodetector based on quasi one-dimensional layered (TaSe4)2I

Infrared photodetectors have attracted great interest due to their wide range of applications. (TaSe4)(2)I nanowires were prepared by the scotch-tape mechanical exfoliation method, and optoelectronic properties are systematically investigated. The (TaSe4)(2)I photodetector shows superior performance under the leading role of the photo-bolometric effect. Remarkably, the prefabricated photodetector recorded a superior responsivity of 0.792 A W-1 and a high external quantum efficiency of 100.259% under the condition of near-infrared light. These excellent properties suggest that (TaSe4)(2)I is a highly competitive candidate for high-performance near-infrared photodetectors.

Automated summary

(TaSe4)(2)I nanowires, prepared by the scotch-tape mechanical exfoliation method, exhibit superior optoelectronic properties and excellent performance as near-infrared photodetectors, with a high responsivity of 0.792 A W-1 and an external quantum efficiency of 100.259%. These outstanding properties make (TaSe4)(2)I a highly competitive candidate for high-performance near-infrared photodetectors.