Related references
Note: Only part of the references are listed.Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography
Nicholas A. Blumenschein et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition
Zahabul Islam et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Raman Thermography of Peak Channel Temperature in β-Ga2O3 MOSFETs
J. W. Pomeroy et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors
Alexander Y. Polyakov et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)
Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers
Minghan Xian et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2019)
Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs
Xiang Zheng et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
A review of Ga2O3 materials, processing, and devices
S. J. Pearton et al.
APPLIED PHYSICS REVIEWS (2018)
Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs
Manikant Singh et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Accurate Measurement of Channel Temperature for AlGaN/GaN HEMTs
Mei Wu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants
M. Slomski et al.
JOURNAL OF APPLIED PHYSICS (2017)
Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling
Man Hoi Wong et al.
APPLIED PHYSICS LETTERS (2016)
Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n--Ga2O3 drift layers grown by halide vapor phase epitaxy
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2016)
Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs
Sara Martin-Horcajo et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
Man Hoi Wong et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Lattice thermal conductivity in β-Ga2O3 from first principles
Marco D. Santia et al.
APPLIED PHYSICS LETTERS (2015)
Anisotropic thermal conductivity in single crystal β-gallium oxide
Zhi Guo et al.
APPLIED PHYSICS LETTERS (2015)
Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy
Kohei Sasaki et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Ga2O3 Schottky Barrier Diodes Fabricated by Using Single-Crystal β-Ga2O3 (010) Substrates
Kohei Sasaki et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy
Miao Zhao et al.
OPTICS COMMUNICATIONS (2013)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Investigations on junction temperature estimation based on junction voltage measurements
Z. Khatir et al.
MICROELECTRONICS RELIABILITY (2010)
Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature
Encarnacion G. Villora et al.
APPLIED PHYSICS LETTERS (2008)
Channel temperature determination in high-power AlGaN/GaN HFETs using electrical methods and Raman spectroscopy
Richard J. I. Simms et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Deep-ultraviolet transparent conductive β-Ga2O3 thin films
M Orita et al.
APPLIED PHYSICS LETTERS (2000)