A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs

The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga2O3 MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K.mm/W to be measured in Ga2O3 MOSFETs. However, neglecting the effect of trapping causes an error of similar to 15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.

Automated summary

A new method for measuring temperature in semiconductor devices is proposed in this study, with a focus on minimizing the interference from trapping effects. Results show that there is a certain degree of error in the channel temperature measured using drain current, with the actual channel temperature being the average value between the source and drain contacts.