Journal
APPLIED PHYSICS LETTERS
Volume 120, Issue 7, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0085272
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Funding
- JST A-Step [JPMJTR20T7]
- JST CREST [JPMJCR20C6]
- JSPS KAKENHI [17J03125, 19H00860, 21K18827]
- Asahi Glass Foundation
- Spintronics Research Network of Japan
- Grants-in-Aid for Scientific Research [21K18827, 19H00860, 17J03125] Funding Source: KAKEN
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This study demonstrates the considerable potential of a CoFeB/MgO-based magnetic tunnel junction (MTJ) directly formed on a flexible substrate as a high-sensitivity strain gauge. Under the condition of external magnetic-field assistance, the flexible MTJ achieves a gauge factor of approximately 1000, which is the highest sensitivity reported for a film-type strain gauge and about 500 times larger than that of the most prevalent metal-foil strain gauge. Moreover, using a flexible MTJ with strain-insensitive and strain-sensitive layers, a large resistance change due to strain application can be achieved even without the presence of a magnetic field.
We show that a CoFeB/MgO-based magnetic tunnel junction (MTJ) formed directly on a flexible substrate has considerable potential as a high-sensitivity strain gauge. A gauge factor of & SIM;1000, which represents the highest sensitivity reported, thus far, for a film-type strain gauge and is & SIM;500 times larger than that of the most prevalent metal-foil strain gauge, is realized in the flexible MTJ with a pseudo-spin valve structure under the condition of external magnetic-field assistance. Additionally, using a flexible MTJ with strain-insensitive exchange-biased pinned and strain-sensitive free layers, we demonstrate that a large resistance change due to the strain application can be achieved under magnetic field-free conditions. According to simulations based on the coherent magnetization rotation model, conditions are suggested for improving the gauge factor, as well as for using the flexible MTJ as a strain gauge in practical applications.
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