Fabrication and characterization of high performance InAlZnO Schottky barrier diode and its application in ultraviolet photodetection

High-performance InAlZnO (IAZO) Schottky barrier diodes (SBDs) with top Pd/IAZO Schottky contact were fabricated, and the influence of sputtering power used to prepare IAZO films on the device performance was investigated. The 50 W-fabricated IAZO SBD exhibited the relatively best electrical properties, including a close-to-unity ideality factor (1.03), a high rectification ratio (1.83 x 10(7)), a low series resistance (237.5 m omega cm(2)), large barrier heights (0.87 and 0.82 eV), and a small barrier inhomogeneity (0.05 eV), which was mainly due to the least background doping density (8.43 x 10(15)/cm(3)) and interface state density (4.30 x 10(10)/eV cm(2)) at 50 W. Meanwhile, the IAZO SBDs prepared at 50 W also displayed the best device uniformity and highest reverse breakdown voltage (-15.23 & PLUSMN; 0.405 V). A 50 W-fabricated IAZO SBD with a horizontal structure was then applied to the ultraviolet photodetector, and it showed good detection effect, especially the fast response with an average rise time of 0.208 s and an average decay time of 0.094 s. Our study indicates the great research value and development potential of IAZO SBDs in future integrated circuits and other fields.

Automated summary

High-performance InAlZnO (IAZO) Schottky barrier diodes (SBDs) with top Pd/IAZO Schottky contact were fabricated, with the 50 W-fabricated IAZO SBD exhibiting the best electrical properties, including a close-to-unity ideality factor, high rectification ratio, low series resistance, large barrier heights, and small barrier inhomogeneity. Additionally, the IAZO SBDs prepared at 50 W displayed the best device uniformity, highest reverse breakdown voltage, and fast response when applied to ultraviolet photodetection.