Large stress-induced anisotropy in soft magnetic films for synthetic spin valves

We obtain a large in-plane magnetic uniaxial anisotropy in the soft magnetic Fe60Co20B20 (FeCoB) thin films prepared by rotational sputtering. The anisotropy field (H-a) of 75 to 175 Oe was found in the films with wide ranged thickness from 2.5 to 100 nm, which was attributed to the magnetoelastic energy in association with anisotropic tensile stress. This stress-induced anisotropy has outstanding thermal stability that survives up to 350 & DEG;C in the annealing process. The similar large uniaxial anisotropy can be realized in other soft magnetic thin films, such as Fe, Co, Ni, FeCo, and NiFe, with the same synthesis technique. The anisotropic FeCoB film was used as a free layer in a synthetic spin valve. A linear resistance change against external field with a range wider than & PLUSMN;100 Oe together with a significantly reduced coercivity of & SIM;1.1 Oe (& SIM;8.5 Oe in the case with isotropic free layer) was observed in the transfer curve. The results of this work not only confirm the feasibility of films with large stress-induced magnetic anisotropy as a functional layer in spin-valve devices but also demonstrate a simple synthesis route to induce the magnetic anisotropy, which provides an additional control parameter for the spintronic device design.

Automated summary

Large in-plane magnetic uniaxial anisotropy was achieved in Fe60Co20B20 thin films prepared by rotational sputtering, exhibiting outstanding thermal stability up to 350°C. These stress-induced anisotropy films were used as free layers in synthetic spin valves, showing a linear resistance change against external field and reduced coercivity, providing a simple synthesis route to induce magnetic anisotropy for spintronic device design.