A perspective on optimizing photoelectric conversion process in 2D transition-metal dichalcogenides and related heterostructures

As a type of layered two-dimensional (2D) structure, transition-metal dichalcogenides (TMDs) and related heterostructures have recently received much attention in applications such as electronics, optoelectronics, and energy conversion/storage. The changes in the atomic bond nature in 2D TMDs, including bond length, bond angle, and bond energy, are the key factors affecting the performance of these systems. Some modulations, such as strain engineering and geometry effect, provide effective methods to enhance the related performance of devices constructed by 2D TMDs by a change in the bond nature. In this Perspective, we review our recent works done on photoelectric conversion properties of 2D TMDs and related heterostructures under various conditions, analyze the underlying mechanism of different modulation modes, and then identify the key factors determining optimal optoelectronic properties at the atomic level. Published under an exclusive license by AIP Publishing.

Automated summary

Transition-metal dichalcogenides (TMDs) and related heterostructures, as a type of layered 2D structure, have gained much attention in fields such as electronics, optoelectronics, and energy conversion/storage. Modulations in the atomic bond nature, such as strain engineering and geometry effect, are effective methods to enhance the performance of devices constructed by TMDs. This Perspective reviews recent research on the photoelectric conversion properties of TMDs and heterostructures, analyzes the underlying modulation mechanisms, and identifies key factors at the atomic level for optimal optoelectronic properties.