A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1-xN, x is the Al composition), beta-phase gallium oxide (beta-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1-xN and beta-Ga2O3. This Perspective delineates the need and process for the electro-thermal co-design of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.

Automated summary

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are ongoing, aiming to realize next-generation power conversion and wireless communication systems. Despite offering higher performance and efficiency, overcoming adverse thermal effects remains a critical challenge for the successful deployment of UWBG device technologies.