Magneto-electric coupled ordered PMN-PT/NiFe2O4 composite nanostructures

In this work, a well-ordered array of multiferroic magnetoelectric (ME) dot-like nanostructures of Pb(Mg1/3Nb2/3)O-3](0.65)-[PbTiO3](0.35) (PMN-PT)/NiFe2O4 is explored for high density and low power consuming memory devices. Ordered arrays of ferromagnetic NiFe2O4 nanodots underneath a ferroelectric PMN-PT layer were fabricated using silicon nitride based stencil masks and pulsed laser deposition techniques. The piezo-response and magnetic force microscopy (PFM) measurements reveal coexistence of magnetic and ferroelectric domains in PMN-PT/NiFe2O4 films at room temperature. The ferroelectric polarization can be switched with the electrically biased PFM tip. The ME coupling is evident in the PMN-PT/NiFe2O4 films, which is attributed to the transfer of the elastic strain from PMN-PT to NiFe2O4. The PMN-PT/NiFe2O4 nanodot films exhibit enhanced ME coupling coefficient (alpha) as compared to continuous bilayer PMN-PT/NiFe2O4 films, owing to the superior strain transfer efficiency in nanodot heterostructures. The nanodot films demonstrate electric-field controlled nonvolatile switching of alpha, which can be used to store binary information in memory devices, holding all the advantages of ferroelectric random access memory but overcoming the major disadvantage of destructive reading of polarization. The results reveal a versatile approach for fabrication of well-ordered nanodot arrays for low power consuming, high-density ME device applications. Published under an exclusive license by AIP Publishing.

Automated summary

This study explores well-ordered arrays of multiferroic magnetoelectric dot-like nanostructures for high density and low power consuming memory devices. The PMN-PT/NiFe2O4 nanodot films demonstrate enhanced ME coupling coefficient and electric-field controlled nonvolatile switching, providing a versatile approach for high-density ME device applications.