Journal
APPLIED PHYSICS LETTERS
Volume 119, Issue 20, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0069569
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Funding
- National Natural Science Foundation of China [52102161, 52073075]
- Shenzhen Training Programme Foundation for the Innovative Talents [RCBS20200714114911270]
- Shenzhen Science and Technology Program [KQTD20200820113045083, KQTD20170809110344233, JCYJ20180507183424383]
- Natural Science Foundation of Guangdong Province [2021A1515012423]
- Research Grant Council of Hong Kong [15205318]
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Quasi-one-dimensional layered TiS3 nanosheets exhibit highly anisotropic physical properties, showing different piezoresistance and Raman anisotropic strain responses along different principal axes. Experimental and theoretical studies confirm that the giant anisotropy is attributed to the strain modulated bandgap.
Quasi-one-dimensional layered TiS3 nanosheets possess highly anisotropic physical properties. Herein, we reported the anisotropic strain response of Raman and the piezoresistance effect in layered TiS3 nanosheets. An attractive Gruneisen parameter ( gamma m) of 5.82 was achieved for A g III mode in the b-axis strained TiS3 nanosheet, while a negligible value of gamma m was obtained when the strain is applied along the a-axis direction. We also revealed the opposite piezoresistive effect with strains applied along the two principal axes, demonstrating a gauge factor ratio of approximately -1:3.2. The giant anisotropy is attributed to the strain modulated bandgap, which was further confirmed by density functional theory calculations.
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